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The Microchip Technology 1N5615E3 is a glass-passivated junction fast switching rectifier designed for high reliability applications. It features a Superectifier structure and operates within a temperature range of -65 °C to +175 °C. Key electrical ratings include a maximum average forward rectified current (IF(AV)) of 1.0 A, a repetitive peak reverse voltage (VRRM) of 200 V, and a non-repetitive peak forward surge current (IFSM) of 50 A. The device exhibits a maximum reverse leakage current (IR) of 0.5 µA and a typical forward voltage drop (VF) of 1.2 V at rated current.
Verify the specific manufacturer designation, as Vishay also produces the 1N5615GP variant with identical specifications. Confirm RoHS compliance status and package type DO-15 availability directly with authorized distributors. Ensure the component meets MIL-S-19500 environmental standards if required by the design specification.
Select this component when a 200 V rating is required alongside a 1 A continuous current capacity in a through-hole package. Consider the 175 °C junction temperature limit for high-temperature environments. Evaluate the 150 ns reverse recovery time against circuit switching speed requirements to ensure adequate performance margins.
This part belongs to the 1N5615GP thru 1N5623GP series of glass passivated junction fast switching rectifiers manufactured by Vishay General Semiconductor. The series covers voltage ratings from 200 V to 1000 V while maintaining consistent current and thermal characteristics across the lineup.
The Vishay 1N5615GP/56-E3 serves as a direct functional equivalent with matching electrical parameters and mechanical dimensions.