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The Microchip Technology 1N5615US/TR is a fast recovery rectifier diode designed for surface mount applications. It features a single configuration with a maximum repetitive peak reverse voltage of 200 V and an average forward current rating of 1 A. The device utilizes an A-Package-2 form factor and exhibits a forward voltage drop of 1.6 V at rated current, alongside a maximum surge current capacity of 25 A. Reverse leakage current is specified at 500 nA, with a typical reverse recovery time of 150 ns. The component operates within a junction temperature range from -65 °C to +175 °C.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and qualification level. Ensure the procurement channel provides valid traceability documentation required for military-grade components. Confirm that the delivered units match the exact part number specifications regarding voltage ratings and recovery times before integration into critical designs.
Select this component when a surface mount fast recovery rectifier is required for 200 V applications. Compare the 150 ns reverse recovery time against circuit switching frequencies to ensure adequate performance. Verify that the 1 A current rating meets the load requirements while accounting for thermal derating at elevated operating temperatures up to 175 °C.
This device belongs to the 1N5615US through 1N5623US series of surface mount rectifiers. These components are qualified to MIL-PRF-19500/429 standards, indicating suitability for demanding environments where failure is not an option. The series offers industry-standard pinouts and electrical characteristics adapted for modern surface mount technology manufacturing processes.
Cross-reference with other manufacturers' 1N5615 equivalents only if they explicitly meet the MIL-PRF-19500/429 specification. Verify that any substitute maintains the same A-Package-2 footprint and hermetic sealing requirements to ensure mechanical and environmental compatibility.