1N5615US

1N5615US

$5.94
  • Description:DIODE STANDARD 200V 1A D5A
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:8e6e07c08465 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE STANDARD 200V 1A D5A
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io):1A
  • Voltage - Forward (Vf) (Max) @ If:1.6 V @ 3 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):150 ns
  • Current - Reverse Leakage @ Vr:500 nA @ 200 V
  • Capacitance @ Vr, F:45pF @ 12V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:SQ-MELF, A
  • Supplier Device Package:D-5A
  • Operating Temperature - Junction:-65°C ~ 175°C

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1N5615US

Overview

The Microchip Technology 1N5615US is a single fast recovery rectifier diode designed for surface-mount applications. It features a maximum repetitive peak reverse voltage of 200 V and an average forward current rating of 1 A. The device utilizes the A-Package-2 form factor, which corresponds to the standard DO-213AA (SMB) outline. Key electrical characteristics include a maximum forward voltage of 1.6 V at rated current, a non-repetitive peak surge current capacity of 25 A, and a typical reverse leakage current of 500 nA. The component exhibits a fast recovery time of 150 ns, making it suitable for high-frequency switching circuits. It operates reliably within a junction temperature range from -65 °C to +175 °C.

Feature Summary

  • Fast recovery performance with a specified 150 ns reverse recovery time for efficient high-frequency operation
  • High thermal stability supporting continuous operation up to a junction temperature of +175 °C
  • Robust surge handling capability with a 25 A non-repetitive peak forward current rating
  • Surface-mount construction in the A-Package-2 format for automated assembly integration

Applications

  • High-frequency power supply rectification
  • Free-wheeling diodes in DC-DC converters
  • Polarity protection circuits
  • General-purpose rectification in industrial electronics

Procurement Notes

Verify the specific suffix configuration against the manufacturer's official datasheet to ensure compatibility with required packaging and quality standards. Confirm that the procurement channel provides traceability documentation consistent with aerospace or military specifications if applicable. Check for recent Product Change Notifications regarding material composition or manufacturing site updates before finalizing orders.

Selection Notes

Select this component when a surface-mount solution is required for 200 V applications needing faster switching speeds than standard rectifiers provide. Ensure the PCB footprint matches the A-Package-2 dimensions. Evaluate thermal management requirements given the 175 °C junction limit. Compare against similar SMB packages if space constraints differ slightly, but verify pinout and electrical ratings remain identical.

Part Context

This part belongs to the 1N56xx series of silicon rectifiers manufactured by Microchip Technology. The series includes variants with different voltage ratings and recovery times, such as the standard recovery 1N5614 and the ultra-fast recovery 1N5621. The US suffix typically denotes a specific tape-and-reel packaging option for the surface-mount variant, distinguishing it from through-hole versions like the JAN1N5615.

Replacement Considerations

Direct substitutes must match the 200 V rating, 1 A current, and SMB package. Verify that alternative fast recovery diodes maintain comparable reverse recovery times to avoid circuit timing issues. Cross-reference with other manufacturers offering equivalent DO-213AA components.

1N5615US1N5615US
$5.94
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