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The Microchip Technology 1N5616US/TR is a standard recovery rectifier diode designed for surface-mount applications. It features a single configuration with a maximum repetitive peak reverse voltage of 400 V and an average forward current rating of 1 A. The device utilizes a D-5A-2 package, also known as SQ-MELF, and operates within a temperature range of -65°C to +200°C junction temperature. Key electrical characteristics include a forward voltage of 1.3 V at rated current, a reverse leakage current of 500 nA, and a typical recovery time of 2 µs. It supports a maximum surge current of 30 A.
Verify the specific suffix TR indicates tape-and-reel packaging when sourcing. Confirm that the component meets the required military qualification levels (JAN or JANS) for your application environment. Ensure compatibility with the D-5A-2 footprint during PCB layout. Check for recent Product Change Notifications regarding material or process updates from the manufacturer.
Select this component for designs requiring high-temperature tolerance and hermetic sealing in a compact surface-mount form factor. Compare against axial-leaded 1N5616 variants if through-hole mounting is preferred. Consider the 2 µs recovery time suitability for standard frequency rectification rather than high-speed switching applications.
This part belongs to the 1N5614 through 1N5622 series of industry-standard rectifiers. These devices are recognized for their robustness in demanding environments. The US suffix typically denotes the SQ-MELF surface-mount package variant, distinguishing it from traditional axial leaded versions while maintaining similar electrical performance profiles.
Direct substitutes include other military-grade 1A 400V SQ-MELF rectifiers qualified to MIL-PRF-19500/427. Verify pinout compatibility and thermal resistance specifications before substitution.