1N5617E3/TR

Overview

The Microchip Technology 1N5617E3/TR is a fast recovery rectifier diode designed for through-hole mounting in the A-Package-2 (DO-41) axial leaded configuration. It features a single-phase configuration with a maximum repetitive peak reverse voltage of 400 V and an average forward rectified current rating of 1 A. The device exhibits a typical forward voltage drop of 1.6 V at rated current and a maximum non-repetitive surge current capability of 25 A. Key electrical characteristics include a reverse leakage current of 500 nA and a fast recovery time of 150 ns. The component operates within an extended temperature range from -65 °C to +175 °C, ensuring reliability in demanding environments.

Feature Summary

• Fast recovery performance with a 150 ns switching time suitable for high-frequency applications
• Extended thermal stability supporting operation up to +175 °C junction temperature
• Robust surge current handling capability for transient protection scenarios

Applications

• High-frequency power supply rectification circuits
• Free-wheeling diodes in inductive load switching applications
• General-purpose rectification in aerospace and defense electronics

Procurement Notes

Verify the specific suffix 'E3' indicates lead-free compliance and RoHS status against the official Microchip datasheet. Confirm the 'TR' designation corresponds to tape-and-reel packaging requirements for automated assembly processes. Ensure the ordering part number matches the exact voltage and current ratings required by the circuit design specifications before finalizing procurement.

Selection Notes

Select this component when a fast recovery characteristic is required instead of standard recovery alternatives like the 1N5616. The 1 A current rating and 400 V blocking voltage define the operational limits. Consider the axial package form factor for through-hole PCB layouts. Verify that the 150 ns recovery time meets the specific frequency constraints of the target application circuit.

Part Context

This component belongs to the 1N56xx series of fast recovery rectifiers manufactured by Microchip Technology. It serves as a specialized alternative to standard silicon rectifiers, offering improved switching speeds. The series is commonly utilized in industrial and military-grade electronic systems where reliable high-voltage rectification and rapid turn-off times are critical design parameters.

Replacement Considerations

The 1N5616 is a standard recovery variant within the same series but lacks the fast recovery specification. Cross-reference the 1N5617E3 with other manufacturers' DO-41 fast recovery diodes only if electrical parameters such as Vr, If, and trr are strictly matched.