1N5617E3

Overview

The Microchip Technology 1N5617E3 is a silicon rectifier diode designed for general-purpose applications. It features an axial through-hole package and supports a maximum average forward rectified current of 1 A with a repetitive peak reverse voltage rating of 400 V. The device exhibits a low leakage current and high forward surge capability, ensuring reliable operation in demanding environments.

Feature Summary

• Glass-passivated junction structure for enhanced reliability
• High forward surge current capability
• Low leakage current characteristics

Applications

• General purpose rectification
• Free wheeling diode circuits
• Power supply output stages

Procurement Notes

Verify the specific manufacturer source, as the 1N5617E3 designation is primarily associated with Vishay General Semiconductor. Confirm that the supplied component matches the required electrical specifications and package type if sourced from alternative distributors or secondary manufacturers.

Selection Notes

Select this component for circuits requiring robust 400 V blocking capability and 1 A continuous current handling. Ensure the thermal management design accommodates the forward voltage drop and power dissipation at the intended operating temperature range.

Part Context

This part belongs to the standard 1N56xx series of fast recovery rectifiers. These components are widely used in industrial and consumer electronics for converting AC to DC signals where moderate speed and high voltage ratings are necessary.

Replacement Considerations

Equivalent parts include the 1N5617GP-E3 and JAN1N5617US/TR. Verify pinout compatibility and ensure the substitute meets the same 400 V reverse voltage and 1 A forward current requirements.