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The 1N5617US/TR is a fast recovery rectifier manufactured by Microchip Technology. It features a single diode configuration with a maximum repetitive peak reverse voltage of 400 V and an average forward current rating of 1 A. The device utilizes surface mount technology in the A-Package-2 form factor. Key electrical characteristics include a forward voltage of 1.6 V, a reverse leakage current of 500 nA, and a rapid recovery time of 150 ns. It supports a maximum surge current of 25 A and operates within a junction temperature range of -65 °C to +175 °C.
Verify component authenticity through authorized Microchip distributors or certified suppliers. Confirm that the received parts match the JAN1N5617US/TR designation and package type. Check for valid traceability documentation and compliance certificates. Ensure storage conditions maintain component integrity prior to installation.
Select this component when fast recovery characteristics are required for efficient power conversion. The 400 V rating provides adequate margin for standard industrial voltage levels. Consider the SMT package constraints during PCB layout planning. Evaluate thermal management requirements given the 175 °C maximum junction temperature capability.
This part belongs to the Microchip rectifier portfolio, specifically designed for robust power handling in compact footprints. It serves as a surface mount alternative to traditional axial leaded variants like the 1N5617GP-E3/54. The US suffix indicates specific packaging and processing standards defined by the manufacturer for industrial-grade reliability.
Public confirmed substitute part numbers: JAN1N5617US.