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The JAN1N5617US is a single-element silicon rectifier diode manufactured by Microchip Technology. It features a maximum repetitive peak reverse voltage of 400V and an average forward current rating of 1A. The device utilizes a hermetically sealed glass package with two terminals, designed for high-reliability applications. It operates within a temperature range from -65°C to +175°C and complies with the MIL-19500/429J reference standard.
Verify the specific suffix US indicates the hermetic glass package variant distinct from non-hermetic versions. Confirm compliance requirements against MIL-19500/429J specifications prior to ordering. Ensure design compatibility with the specified 400V reverse voltage and 1A current limits for the target application environment.
Select this component when hermetic sealing and military-grade reliability are mandatory. The glass package provides superior isolation compared to plastic alternatives. Consider the thermal management requirements for operation near the 175°C maximum limit. Verify that the axial leaded form factor fits the available board space constraints.
This part belongs to the JAN series of microcircuit and discrete devices produced under military specifications. It serves as a ruggedized alternative to commercial grade rectifiers, offering enhanced durability against moisture and mechanical stress. The manufacturer maintains strict quality controls aligned with defense industry standards.
Direct substitutes include other JAN-series variants meeting MIL-19500/429J. Cross-reference with equivalent hermetic glass-passivated diodes from qualified manufacturers ensuring identical electrical ratings and package dimensions.