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The Microchip Technology 1N5619/TR is a fast recovery rectifier diode designed for high-reliability applications. It features a single configuration with a maximum repetitive peak reverse voltage of 600 V and an average forward rectified current of 1 A. The device exhibits a typical forward voltage of 800 mV at rated current and a maximum reverse leakage current of 500 nA. Key electrical characteristics include a maximum surge current capability of 25 A and a fast recovery time of 250 ns. The component operates within a junction temperature range from -65 °C to +175 °C.
Verify the specific suffix designation, as standard military variants often utilize distinct packaging or qualification markings compared to commercial equivalents. Confirm that the procurement channel provides valid traceability documentation required for defense contracts. Ensure compliance with export control regulations associated with military-grade semiconductor devices before finalizing acquisition.
Select this component when a hermetically sealed, fast-recovery diode is required for environments where failure is not an option. The 600 V rating supports medium-voltage rectification tasks. Compare against standard commercial 1N5619 units if military qualification and voidless-glass sealing are not mandatory for the specific design constraints.
This part belongs to the 1N5615 through 1N5623 series of industry-recognized rectifiers manufactured by Microchip Technology. These devices share common structural characteristics, including Category I metallurgical bonds and robust glass passivation. The series covers various voltage ratings while maintaining consistent current handling capabilities across the product line.
Publicly confirmed substitute part numbers for this specific variant are not available in the provided source material.