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The Microchip Technology 1N5619E3 is a single silicon rectifier diode designed for through-hole mounting in the DO-204AC (DO-15) axial package. It features a maximum repetitive peak reverse voltage of 600 V and an average forward rectified current rating of 1 A. The device exhibits a standard recovery time of 250 ns, with a maximum forward voltage drop of 1.2 V at rated current. It supports a surge current of 50 A and operates within a junction temperature range of -65 °C to +175 °C.
Verify the manufacturer designation on the component marking, as this part number is historically associated with multiple manufacturers including Vishay and Microchip. Confirm that the specific unit received matches the required electrical specifications and package dimensions. Ensure compliance with RoHS directives if applicable to the assembly process. Cross-reference datasheets from authorized distributors to confirm the exact revision and testing standards applied to the delivered batch.
Select this component when a robust, high-temperature capable standard recovery diode is required for axial through-hole implementations. The 600 V rating provides sufficient margin for many AC line-level applications. Consider the 250 ns recovery time against faster alternatives if switching frequency exceeds typical mains frequencies. Verify thermal management requirements based on the 1 A continuous current rating and ambient operating conditions.
The 1N5619 series belongs to a long-standing family of hermetically sealed glass-passivated rectifiers. The 'E3' suffix typically indicates lead-free termination and halogen-free compound compliance. This specific variant maintains the traditional DO-15 form factor while adhering to modern environmental regulations. It serves as a direct replacement for older non-compliant versions in legacy designs requiring high reliability.
Yes, the 1N5619E3 features a hermetically sealed glass passivated junction construction.
The maximum operating junction temperature is +175 °C.