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The Microchip Technology 1N5620US/TR is a single standard recovery rectifier diode designed for surface-mount applications. It features an A-Package-2 (SQ) form factor with a maximum repetitive reverse voltage of 800 V and an average forward rectified current of 1 A. The device exhibits a forward voltage of 1.3 V at rated conditions and supports a maximum surge current of 30 A. Key electrical characteristics include a reverse leakage current of 500 nA and a typical reverse recovery time of 2 µs. It operates within a junction temperature range of -65 °C to +200 °C.
Verify the specific suffix US/TR against official Microchip documentation to confirm surface-mount packaging and tape-and-reel delivery format. Ensure compliance requirements are met, as this component may not adhere to standard RoHS directives. Confirm that the A-Package-2 footprint matches the target PCB design before finalizing procurement orders.
Select this component when a surface-mount solution is required for 800 V applications. The 2 µs recovery time distinguishes it from fast-recovery variants, making it suitable for lower-frequency general-purpose tasks. Evaluate the 1 A current rating against peak load demands to ensure adequate thermal headroom within the specified operating temperature range.
This part belongs to the 1N56xx series of silicon rectifiers manufactured by Microchip Technology. The series encompasses various voltage ratings and recovery speeds, with the 1N5620 specifically designated for 800 V standard recovery performance. The US designation typically indicates a hermetically sealed or ruggedized variant compared to commercial equivalents.
Direct replacements must match the 800 V rating, 1 A current capacity, and SQ package dimensions. Verify that substitute components maintain compatible reverse recovery times and forward voltage characteristics to ensure circuit integrity without modification.