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The Microchip Technology 1N5621 is a standard recovery rectifier diode designed for through-hole mounting in the DO-204AP (DO-15) package. It features an average forward current of 1 A and a maximum repetitive reverse voltage of 800 V. The device exhibits a typical forward voltage drop of 1.2 V at rated current and a low reverse leakage current of 500 nA. With a maximum surge current capability of 50 A and a reverse recovery time of 300 ns, it operates reliably within a junction temperature range of -65 °C to +175 °C.
Verify the specific manufacturer source, as Vishay Semiconductors also produces this part number. Confirm RoHS compliance status, as some variants may not meet current environmental directives. Check lead times carefully due to potential long delivery periods associated with legacy or specialized semiconductor lines. Ensure the package type matches the required PCB footprint before ordering.
Select this component when a standard recovery speed is sufficient for the application frequency. The 800 V rating suits medium-voltage rectification tasks. Consider the thermal management requirements given the 175 °C maximum junction temperature limit. Compare against fast recovery alternatives if switching losses are critical to system performance.
This component belongs to the widely recognized 1N56xx series of silicon rectifiers. These devices are commonly used in industrial and consumer electronics for basic power rectification. The 1N5621 specifically targets applications requiring 800 V blocking capability with moderate switching speeds.
The 1N5621GP from Vishay offers similar electrical specifications but may differ in packaging or compliance details. Other manufacturers produce equivalent 1A 800V rectifiers; verify pinout compatibility and thermal characteristics before substitution.