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The Microchip Technology 1N5621US/TR is a single fast recovery rectifier diode designed for surface-mount applications. It features an A-Package-2 form factor with a maximum repetitive reverse voltage of 800 V and an average forward current rating of 1 A. The device exhibits a forward voltage drop of 1.6 V at rated current and supports a maximum surge current of 25 A. Key electrical characteristics include a reverse leakage current of 500 nA and a typical reverse recovery time of 300 ns. It operates within a junction temperature range of -65 °C to +175 °C.
Verify the specific suffix TR indicates tape-and-reel packaging when ordering. Confirm RoHS status as non-compliant based on available documentation. Ensure compatibility with standard SMD assembly processes for the A-Package-2 footprint. Validate that the 800V rating meets circuit requirements before integration.
Select this component for designs requiring fast recovery characteristics in a surface-mount package. Compare against standard recovery alternatives if lower cost is prioritized over speed. Ensure the 1A current rating aligns with peak load demands. Consider the 175°C max junction temperature for high-thermal environments.
This part belongs to the 1N56xx series of rectifiers manufactured by Microchip Technology. It serves as the surface-mount equivalent to through-hole variants like the 1N5621. The US suffix typically denotes the small outline package style, distinguishing it from axial leaded versions while maintaining similar electrical specifications.
Publicly confirmed substitute part numbers are not available in the provided source material.