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The Microchip Technology 1N5622US is a surface-mount standard recovery rectifier diode designed for high-reliability applications. It features a maximum repetitive peak reverse voltage of 1000 V and an average forward rectified current rating of 1 A. The device utilizes SQ-MELF packaging with a voidless-glass construction and Category I metallurgical bond, ensuring hermetic sealing. Key electrical characteristics include a maximum forward voltage of 1.3 V at 3 A and a reverse leakage current of 500 nA at 1000 V. The component supports a junction temperature range from -65°C to 200°C.
Verify the specific suffix US against official datasheets to confirm surface-mount MELF packaging and military qualification status. Ensure compatibility with MIL-PRF-19500/427 requirements for your application. Confirm RoHS exemption status as these devices are typically non-compliant. Validate that the supplier provides traceable documentation for military-grade components.
Select this component when hermetic sealing and military qualification are mandatory for circuit reliability. The SQ-MELF package offers a compact footprint suitable for space-constrained designs. Consider the 200°C maximum junction temperature for high-thermal environments. Verify that the 1 A current rating meets the load requirements without derating issues.
This part belongs to the 1N56xx series of standard recovery glass rectifiers manufactured by Microchip Technology. The series includes various voltage ratings from 200 V to 1000 V in both through-hole axial and surface-mount configurations. The US suffix specifically denotes the surface-mount variant, distinguishing it from the traditional axial leaded versions like the 1N5622.
Publicly confirmed substitute part numbers are not available in the provided source material.