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The Microchip Technology 1N5623/TR is a single fast recovery rectifier diode rated for 1000 V reverse voltage and 1 A average forward current. It utilizes surface-mount D-5A packaging with voidless-glass construction. Key electrical parameters include a maximum forward voltage of 1.6 V at 3 A, a reverse leakage current of 500 nA at 1000 V, and a reverse recovery time of 500 ns. The device supports a maximum surge current of 25 A and operates within a junction temperature range of -65°C to +175°C.
Verify the specific suffix configuration against the official datasheet to ensure compatibility with required military qualification standards. Confirm that the D-5A surface-mount package aligns with the target PCB footprint. Validate that the 1000V rating meets the circuit's peak inverse voltage requirements. Ensure sourcing channels provide traceability documentation consistent with defense or industrial specifications.
Select this component when a hermetically sealed, fast-recovery diode is required for harsh environments. The 1A current rating suits moderate power applications where space constraints favor surface-mount technology. Compare the 500 ns recovery time against slower standard recovery alternatives if switching speed is critical. Ensure the operating temperature range covers the intended environmental extremes.
This part belongs to the 1N5615 through 1N5623 series of surface mount voidless-hermetically sealed fast recovery glass rectifiers. The series offers industry-recognized reliability for working peak reverse voltages from 200 to 1000 volts. It complements axial-leaded versions like the JAN1N5623 by providing a compact SMT option without compromising hermetic sealing.
Public confirmed substitute part numbers are not available in the provided source material.