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The Microchip Technology 1N5623US/TR is a single-element silicon fast recovery rectifier diode designed for surface-mount applications. It features a maximum repetitive peak reverse voltage of 1000 V and an average forward rectified current rating of 1 A. The device exhibits a typical forward voltage drop of 1.6 V at 3 A and a maximum reverse leakage current of 500 nA at 1000 V. Key electrical characteristics include a maximum surge current capability of 25 A and a reverse recovery time of 500 ns. It operates within a junction temperature range of -65°C to +175°C and utilizes the D-5A package configuration.
Verify that the specific order includes the /TR suffix to confirm reel packaging, as standard variants may differ. Confirm RoHS compliance status, as this component is typically non-compliant. Validate the manufacturer part number against official Microchip documentation to ensure authenticity. Check for recent Product Change Notifications regarding assembly site or material updates before finalizing procurement specifications.
Select this component when a surface-mount fast recovery rectifier with 1000 V blocking capability is required. Ensure the application demands a 500 ns recovery time rather than ultrafast alternatives. Verify that the D-5A footprint matches the PCB layout constraints. Consider the 1 A continuous current rating against the circuit's thermal dissipation requirements and ambient operating conditions.
This device belongs to the 1N56xx series of fast recovery rectifiers manufactured by Microchip Technology. The series provides various voltage ratings from 200 V to 1000 V while maintaining consistent 1 A current handling. The US designation indicates a hermetically sealed glass construction, often associated with high-reliability standards such as MIL-PRF-19500/429 for military-grade variants.
Publicly confirmed substitute part numbers are not available in the provided source data.