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The Microchip Technology 1N5623US is a single-element silicon rectifier diode rated for 1 A average forward current and 1000 V maximum repetitive peak reverse voltage. It features a fast recovery time of 500 ns with a maximum reverse leakage current of 500 nA at 1000 V. The device utilizes a hermetically sealed glass D-5A surface-mount package with two pins. It operates within a junction temperature range of -65 °C to +175 °C and meets MIL-PRF-19500/429 military qualification standards.
Verify the specific ordering suffix to confirm package type, as variations exist between hermetic surface-mount and axial leaded configurations. Confirm military qualification requirements against the specific datasheet revision. Ensure compatibility with MIL-PRF-19500/429 standards if used in defense or aerospace contexts. Check for RoHS compliance status as indicated in official documentation.
Select this component when a surface-mount form factor is required alongside strict hermetic sealing capabilities. The 1000 V rating suits high-voltage DC blocking applications. Consider the 500 ns recovery time for moderate-speed switching needs. Verify thermal management requirements given the wide operating temperature range up to 175 °C.
This part belongs to the 1N5615US through 1N5623US series of surface mount voidless-hermetically sealed fast recovery glass rectifiers. The series offers industry-recognized 1.0 Amp ratings with working peak reverse voltages ranging from 200 to 1000 volts. These devices utilize internal Category I metallurgical bonds for enhanced durability.
JAN1N5623US/TR is a reel-packaged variant of the same die and specification. JAN1N5623 is an axial-leaded through-hole version of the same electrical performance. Verify pinout and mechanical footprint differences before substitution.