1N5624-TR

1N5624-TR

$0.74
  • Description:DIODE AVALANCHE 200V 3A SOD64
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:0e9657135d4a Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE AVALANCHE 200V 3A SOD64
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:Avalanche
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io):3A
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 3 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):7.5 µs
  • Current - Reverse Leakage @ Vr:1 µA @ 200 V
  • Capacitance @ Vr, F:60pF @ 4V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:SOD-64, Axial
  • Supplier Device Package:SOD-64
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

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1N5624-TR

Overview

The Vishay 1N5624-TR is a standard avalanche sinterglass diode housed in an SOD-64 through-hole package. It features a 200 V repetitive peak reverse voltage and a 3 A average forward current rating. The device exhibits a maximum forward voltage of 1 V at 3 A, with a low reverse leakage current of 0.1 µA at rated voltage. It supports a peak forward surge current of 100 A and operates within a junction temperature range of -55 °C to +175 °C.

Feature Summary

  • Glass passivated junction for hermetic sealing
  • Controlled avalanche characteristics for energy handling
  • Low reverse current operation
  • High surge current loading capability

Applications

  • General purpose rectification
  • Inductive load switch-off protection
  • Free-wheeling applications

Procurement Notes

Verify the specific ordering code suffix against the manufacturer's documentation to confirm packaging format. The datasheet indicates availability in tape and reel or ammopack configurations. Ensure that the selected variant matches the required mechanical mounting position and lead termination specifications for the target assembly process.

Selection Notes

Select this component when a high-reliability glass-passivated diode is required for general-purpose rectification. The controlled avalanche characteristic allows it to handle non-repetitive pulse energies from inductive loads. Consider the thermal resistance values relative to the expected ambient temperature and lead length to ensure safe operating limits are maintained.

Part Context

This part belongs to the 1N5624 series, which includes variants differentiated by reverse voltage ratings up to 800 V while maintaining a consistent 3 A average forward current and SOD-64 package. The series utilizes sintered glass case technology to provide hermetic sealing and robust performance across a wide temperature range.

Replacement Considerations

Direct substitutes within the same family include the 1N5625 (400 V), 1N5626 (600 V), and 1N5627 (800 V). These parts share identical electrical parameters except for the breakdown voltage rating and package configuration.

FAQ

What is the maximum non-repetitive pulse energy the 1N5624 can absorb?

The device can absorb a maximum pulse energy of 20 mJ during inductive load switch-off events, measured at a junction temperature of 175 °C.

How is the cathode polarity identified on the SOD-64 package?

Polarity is indicated by a color band located on one end of the cylindrical glass package, which denotes the cathode terminal.

1N5624-TR1N5624-TR
$0.74
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