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Product Detailed Parameters
- Description：DIODE SCHOTTKY 70V 33MA DO204AH
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：70 V
- Current - Average Rectified (Io)：33mA
- Voltage - Forward (Vf) (Max) @ If：1 V @ 15 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：200 nA @ 50 V
- Capacitance @ Vr, F：2pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：DO-204AH, DO-35, Axial
- Supplier Device Package：DO-204AH (DO-35)
- Operating Temperature - Junction：-65°C ~ 150°C
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Overview
The Microchip Technology 1N5711 is a silicon Schottky barrier diode with metallurgically bonded construction, qualified per MIL-PRF-19500/444. It features a maximum repetitive reverse voltage of 70 V and a forward current rating of 33 mA DC at +130°C. Electrical characteristics include a minimum breakdown voltage of 70 V at 10 μA, a maximum forward voltage of 1.0 V at 15 mA, and a maximum reverse leakage current of 200 nA at 50 V. The device operates within a temperature range of -65°C to +150°C.
Feature Summary
- Features low reverse leakage characteristics for signal applications
- Utilizes a hermetically sealed glass case in the DO-35 outline
- Provides ultrafast switching capabilities with effective minority carrier lifetime of 100 picoseconds
Applications
- High level UHF/VHF detection
- Pulse applications requiring broad dynamic range
Procurement Notes
Verify that the specific ordering suffix matches the required military qualification level (JAN, JANTX, or JANTXV) as commercial variants exist. Confirm package type availability, as standard through-hole DO-35 and surface-mount UB configurations are distinct products under the same base number. Ensure lead finish specifications align with assembly requirements.
Selection Notes
Select this component when high breakdown voltage and low turn-on voltage are required for small-signal rectification. The DO-35 axial leaded package suits through-hole mounting, while the UB variant serves surface-mount needs. Verify thermal derating curves if operating near the maximum junction temperature limit of +150°C.
Part Context
This part belongs to the 1N5711 series of Schottky barrier diodes manufactured by Microchip Technology. It is designed for use in environments demanding reliability and fast switching speeds. The device is often cross-referenced with other manufacturers' equivalents but maintains specific electrical tolerances defined by its datasheet.
Replacement Considerations
Equivalent parts include the DSB2810 and 1N6858-1 from the same manufacturer family. Cross-manufacturer replacements must be verified against the 70 V reverse voltage and 33 mA forward current limits.
