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The Microchip Technology 1N5711E3 is a small-signal Schottky diode featuring a metal-to-silicon junction. It operates with a maximum repetitive reverse voltage of 50 V and an average forward current of 33 mA DC. The device exhibits a low forward voltage drop of 1 V at 15 mA and a reverse leakage current of 200 nA at 50 V. Designed for through-hole mounting in the DO-35-2 package, it supports a wide operating temperature range from -65°C to +150°C. This component is optimized for high breakdown performance and ultrafast switching characteristics.
Verify the specific suffix 'E3' confirms lead-free compliance against the manufacturer's official datasheet. Confirm that the DO-35-2 through-hole package matches the design requirements. Ensure the 50 V rating and 33 mA current limits are sufficient for the target circuit conditions before finalizing procurement.
Select this component when high-speed switching and low forward voltage are critical for UHF or VHF detection tasks. The wide temperature range makes it suitable for demanding environments. Verify that the through-hole form factor aligns with the PCB layout constraints compared to surface-mount alternatives.
This part belongs to the 1N5711 series of small-signal Schottky diodes manufactured by Microchip Technology. The series is characterized by its metal-to-silicon junction technology, which distinguishes it from standard silicon rectifiers by offering superior switching speeds and lower forward voltage drops for signal processing applications.
Public confirmed substitute part numbers are not available in the provided documentation.