1N5711E3

1N5711E3

$5.02
  • Description:DIODE SCHOTTKY 70V 33MA DO204AH
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:0ba572b611a1 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:DIODE SCHOTTKY 70V 33MA DO204AH
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):70 V
  • Current - Average Rectified (Io):33mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:200 nA @ 50 V
  • Capacitance @ Vr, F:2pF @ 0V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:DO-204AH, DO-35, Axial
  • Supplier Device Package:DO-204AH (DO-35)
  • Operating Temperature - Junction:-65°C ~ 150°C

Download product information

1N5711E3

Overview

The Microchip Technology 1N5711E3 is a small-signal Schottky diode featuring a metal-to-silicon junction. It operates with a maximum repetitive reverse voltage of 50 V and an average forward current of 33 mA DC. The device exhibits a low forward voltage drop of 1 V at 15 mA and a reverse leakage current of 200 nA at 50 V. Designed for through-hole mounting in the DO-35-2 package, it supports a wide operating temperature range from -65°C to +150°C. This component is optimized for high breakdown performance and ultrafast switching characteristics.

Feature Summary

  • Metal-to-silicon junction construction providing high breakdown voltage capabilities
  • Ultrafast switching speed suitable for high-frequency signal applications
  • Low turn-on voltage characteristic enhancing efficiency in detection circuits

Applications

  • High-level UHF/VHF detection systems
  • Pulse application circuits requiring broad dynamic range
  • RF and ultrafast switching signal processing

Procurement Notes

Verify the specific suffix 'E3' confirms lead-free compliance against the manufacturer's official datasheet. Confirm that the DO-35-2 through-hole package matches the design requirements. Ensure the 50 V rating and 33 mA current limits are sufficient for the target circuit conditions before finalizing procurement.

Selection Notes

Select this component when high-speed switching and low forward voltage are critical for UHF or VHF detection tasks. The wide temperature range makes it suitable for demanding environments. Verify that the through-hole form factor aligns with the PCB layout constraints compared to surface-mount alternatives.

Part Context

This part belongs to the 1N5711 series of small-signal Schottky diodes manufactured by Microchip Technology. The series is characterized by its metal-to-silicon junction technology, which distinguishes it from standard silicon rectifiers by offering superior switching speeds and lower forward voltage drops for signal processing applications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

1N5711E31N5711E3
$5.02
Buy Now