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Product Detailed Parameters
- Description：DIODE SCHOTTKY 50V 33MA UB
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：50 V
- Current - Average Rectified (Io)：33mA
- Voltage - Forward (Vf) (Max) @ If：1 V @ 15 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：200 nA @ 50 V
- Capacitance @ Vr, F：2pF @ 0V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：3-SMD, No Lead
- Supplier Device Package：UB
- Operating Temperature - Junction：-65°C ~ 150°C
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Overview
The Microchip Technology 1N5711UB is a small-signal Schottky barrier diode designed for surface-mount applications. It features a ceramic package (UB-3) and offers military-grade qualifications compliant with MIL-PRF-19500/444, including JAN, JANTX, JANTXV, and JANS levels. The device provides unidirectional polarity with an average rectified forward current of 33 mA DC. Key electrical parameters include a maximum repetitive peak reverse voltage of 70 V, a forward voltage of 1 V at 15 mA, and a reverse leakage current of 200 nA at 50 V. It operates within a junction temperature range of -65°C to 150°C.
Feature Summary
- Military-grade qualification compliant with MIL-PRF-19500/444 standards
- Hermetically sealed ceramic surface-mount construction
- Low forward voltage drop characteristic
- Ultrafast switching capability
Applications
- High-reliability aerospace systems
- UHF/VHF detection circuits
- Pulse application environments
- High-level signal detection
Procurement Notes
Verify the specific suffix code (e.g., CC, CA, D) to confirm the exact configuration and qualification level required for your design. Ensure compatibility with MIL-PRF-19500/444 standards if military reliability is mandated. Confirm RoHS compliance status based on the specific manufacturing batch and ordering designation. Check lead times as production cycles may vary significantly for qualified military grades.
Selection Notes
Select this component when a hermetically sealed, surface-mount Schottky diode is required for high-reliability environments. It serves as the surface-mount equivalent of the JEDEC registered 1N5711 axial-leaded diode. Consider this part for designs needing low turn-on voltage and fast switching in UHF or VHF frequencies. Verify that the UB package dimensions fit the PCB layout constraints.
Part Context
This device belongs to the 1N5711 series of Schottky barrier diodes manufactured by Microchip Technology. It is engineered to replace traditional axial-leaded components in modern surface-mount assembly processes while maintaining high-reliability performance standards. The product line includes various qualification levels to suit different operational demands.
Replacement Considerations
The 1N5711UB is the surface-mount equivalent of the 1N5711 axial-leaded diode. For direct replacements, verify pinout compatibility and thermal resistance differences between ceramic and plastic packages. Consult official substitution lists for verified alternatives.
