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Product Detailed Parameters
- Description：DIODE ARRAY SCHOTTKY 50V 33MA UB
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Configuration：1 Pair Common Anode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：50 V
- Current - Average Rectified (Io) (per Diode)：33mA
- Voltage - Forward (Vf) (Max) @ If：1 V @ 15 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：200 nA @ 50 V
- Operating Temperature - Junction：-65°C ~ 150°C
- Mounting Type：Surface Mount
- Package / Case：3-SMD, No Lead
- Supplier Device Package：UB
- Grade：-
- Qualification：-
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Overview
The Microchip Technology 1N5711UBCA/TR is a ceramic surface mount Schottky barrier diode qualified per MIL-PRF-19500/444. It features a JAN reliability level and operates within a junction temperature range of -65°C to +150°C. The device provides an average rectified output current of 33 mA, with a minimum breakdown voltage of 70 V at 10 µA. Electrical characteristics include a maximum forward voltage of 1.0 V at 15 mA, a working peak reverse voltage of 50 V, and a maximum reverse leakage current of 200 nA at 50 V.
Feature Summary
- Ceramic encased construction for high-reliability applications
- Low reverse leakage characteristics
- Low-profile surface mount package design
Applications
- High-reliability military electronic systems
- Surface mount circuit integration requiring low leakage
- Unidirectional signal processing configurations
Procurement Notes
Verify the specific ordering suffixes against official documentation to confirm the exact polarity configuration and qualification level. Confirm that the tape and reel packaging adheres to EIA-418D standards as specified in the mechanical data. Ensure compatibility with the required soldering temperatures and thermal resistance limits during assembly processes.
Selection Notes
Select this component when a ceramic surface mount Schottky diode with military-grade reliability is required. Consider the 33 mA average current rating and 50 V working peak reverse voltage for appropriate circuit biasing. Evaluate the low-profile package dimensions against available board space constraints and verify the gold-plated terminal requirements for interconnection.
Part Context
This part belongs to the 1N5711UB series of Schottky barrier diodes manufactured by Microchip Technology. It serves as the surface mount equivalent of the JEDEC registered 1N5711 axial-leaded number. The series includes various polarity options such as common cathode, common anode, and doubler configurations, all sharing the same robust ceramic encapsulation technology.
Replacement Considerations
Direct replacements include other JAN-level 1N5711 variants from Microchip or equivalent commercial grade parts if military qualification is not mandatory. Verify that substitute components match the 33 mA current rating and 50 V reverse voltage specifications.
