1N5711UBD

1N5711UBD

$23.73
  • Description:DIODE SCHOTTKY 50V UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:75890b353ac5 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:DIODE SCHOTTKY 50V UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io):-
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:200 nA @ 50 V
  • Capacitance @ Vr, F:2pF @ 0V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:UB
  • Operating Temperature - Junction:-65°C ~ 150°C

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1N5711UBD

Overview

The 1N5711UBD is a Schottky barrier rectifier manufactured by Microchip Technology, designed for surface-mount applications. It features a maximum repetitive peak reverse voltage of 50 V and an average forward rectified current of 33 mA DC. The device exhibits a maximum forward voltage drop of 1 V at 15 mA and a reverse leakage current of 200 nA at 50 V. Operating within a junction temperature range of -65°C to 150°C, it utilizes a 3-SMD, No Lead (UB) package.

Feature Summary

  • Utilizes silicon Schottky technology to achieve low turn-on voltage and ultrafast switching characteristics suitable for high-frequency signal processing.

Applications

  • High-level UHF/VHF detection circuits
  • Pulse application systems requiring broad dynamic range
  • Military-grade RF switching environments

Procurement Notes

Verify the specific suffix 'D' against official Microchip documentation to confirm if it denotes a distinct tape-and-reel configuration or packaging variant compared to standard bulk shipments. Ensure compliance with MIL-PRF-19500/444 requirements if military qualification is mandated for the design. Confirm RoHS status as non-compliant based on available data.

Selection Notes

Select this component when a ruggedized, surface-mount Schottky diode is required for harsh environments. The UB package offers space efficiency while maintaining the wide operating temperature range necessary for aerospace or defense electronics. Verify that the 33 mA current rating meets the specific load requirements of the target circuit design.

Part Context

This part belongs to the 1N5711 series of small-signal Schottky diodes produced by Microchip Technology. The series is characterized by metal-to-silicon junction construction, providing high breakdown voltage capabilities. Variants in this family are often qualified to military standards, ensuring reliability in critical electronic systems.

Replacement Considerations

Public confirmed substitute part numbers were not identified in the provided source material.

1N5711UBD1N5711UBD
$23.73
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