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The 1N5711UBD is a Schottky barrier rectifier manufactured by Microchip Technology, designed for surface-mount applications. It features a maximum repetitive peak reverse voltage of 50 V and an average forward rectified current of 33 mA DC. The device exhibits a maximum forward voltage drop of 1 V at 15 mA and a reverse leakage current of 200 nA at 50 V. Operating within a junction temperature range of -65°C to 150°C, it utilizes a 3-SMD, No Lead (UB) package.
Verify the specific suffix 'D' against official Microchip documentation to confirm if it denotes a distinct tape-and-reel configuration or packaging variant compared to standard bulk shipments. Ensure compliance with MIL-PRF-19500/444 requirements if military qualification is mandated for the design. Confirm RoHS status as non-compliant based on available data.
Select this component when a ruggedized, surface-mount Schottky diode is required for harsh environments. The UB package offers space efficiency while maintaining the wide operating temperature range necessary for aerospace or defense electronics. Verify that the 33 mA current rating meets the specific load requirements of the target circuit design.
This part belongs to the 1N5711 series of small-signal Schottky diodes produced by Microchip Technology. The series is characterized by metal-to-silicon junction construction, providing high breakdown voltage capabilities. Variants in this family are often qualified to military standards, ensuring reliability in critical electronic systems.
Public confirmed substitute part numbers were not identified in the provided source material.