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The Microchip Technology 1N5712-1/TR is a small-signal Schottky barrier diode designed for through-hole mounting in DO-35 axial leaded packages. It features a silicon construction with a maximum repetitive reverse voltage of 20 V and an average forward current rating of 75 mA. The device exhibits a low forward voltage drop of 1 V at 35 mA and a maximum reverse leakage current of 150 nA at 16 V. Operating temperatures range from -65°C to +150°C junction temperature, ensuring reliability in demanding environments.
Verify the specific suffix designation against official documentation to confirm tape-and-reel packaging availability versus bulk supply. Confirm RoHS compliance status as some variants may not meet current environmental standards. Ensure the ordering part number matches the required package style and qualification level before procurement.
Select this component for applications requiring fast switching speeds and low forward voltage drops in small-signal contexts. Consider the DO-35 package constraints for through-hole assembly requirements. Evaluate thermal management needs given the specified operating temperature range and power dissipation limits inherent to the axial leaded form factor.
This component belongs to the 1N5712 series of Schottky diodes manufactured by Microchip Technology. It serves as a surface-mount equivalent alternative to traditional JEDEC registered numbers while maintaining axial leaded compatibility. The product line focuses on high breakdown voltage and reliable performance for specialized RF and pulse detection uses.
Cross-reference with standard 1N5712 equivalents for basic functional substitution. Verify pinout compatibility and package dimensions when replacing with generic Schottky diodes. Ensure replacement parts meet the same voltage and current ratings for circuit integrity.