1N5712-1E3

Overview

The Microchip Technology 1N5712-1E3 is a small-signal Schottky barrier diode designed for through-hole mounting in the DO-35 axial leaded package. It features a silicon construction with a maximum repetitive reverse voltage of 16 V and an average forward current rating of 75 mA. The device exhibits a typical forward voltage drop of 1 V at 35 mA and a low reverse leakage current of 150 nA at 16 V. Operating capabilities extend from -65°C to +150°C junction temperature, ensuring reliability in demanding thermal environments.

Feature Summary

• Schottky barrier technology provides fast switching speeds and low forward voltage drop for efficient signal rectification.
• DO-35 axial leaded package enables reliable through-hole integration into printed circuit boards.
• Silicon construction supports extended operating temperatures ranging from -65°C to +150°C.

Applications

• High-frequency signal detection and demodulation circuits
• Clamping and protection stages in RF applications
• Power supply rectification in low-voltage systems

Procurement Notes

Verify that the specific suffix E3 confirms RoHS compliance status against the manufacturer's latest documentation. Confirm the exact electrical parameters, particularly the 16 V reverse voltage rating, as datasheets may vary between commercial and military grades within the same base number. Ensure the DO-35 package dimensions match the target PCB footprint requirements before finalizing procurement decisions.

Selection Notes

Select this component when a low-capacitance Schottky diode is required for high-speed switching or signal processing tasks. The 75 mA current rating suits low-power applications where minimal power loss is critical. Consider the DO-35 package constraints for board space and verify that the 16 V breakdown voltage aligns with the system's peak inverse voltage limits.

Part Context

This part belongs to the 1N571x series of small-signal Schottky diodes manufactured by Microchip Technology. The series is characterized by its use in high-frequency applications due to the low junction capacitance and fast recovery time inherent to Schottky technology. The 1N5712 variant specifically targets low-voltage, high-speed rectification needs in consumer and industrial electronics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.