1N5712#T25

Overview

The Broadcom Limited 1N5712#T25 is a passivated Schottky barrier diode utilizing a patented guard ring design for high breakdown voltage. It operates within a junction temperature range of -65°C to +200°C and supports a DC power dissipation of 250 mW. The device features a minimum breakdown voltage of 20 V, a maximum forward voltage of 550 mV at 35 mA, and a maximum reverse leakage current of 150 nA at 16 V. Package capacitance is limited to 1.2 pF.

Feature Summary

• Patented guard ring design ensures high breakdown voltage stability
• Pico-second switching speed capability for rapid signal processing
• Low turn-on voltage characteristics optimized for efficient conduction
• Passivated construction provides environmental protection

Applications

• High level detecting circuits
• Mixing and frequency discriminating applications
• Sampling and wave shaping systems
• Video detecting equipment

Procurement Notes

Verify the specific ordering suffix #T25 confirms the tape and reel container holding 2500 devices. Confirm the manufacturer source as Broadcom Limited or its authorized successors. Ensure the component meets the required electrical specifications for the intended circuit environment before integration.

Selection Notes

Select this component when a low turn-on voltage and high breakdown voltage are simultaneously required in a glass axial package. Consider the 1.2 pF capacitance limit for high-frequency performance requirements. Evaluate the 250 mW power dissipation rating against thermal management constraints in the final assembly.

Part Context

This part belongs to the 1N5711/1N5712 series of general-purpose Schottky barrier diodes. These components are designed for robust performance in demanding electronic environments. The series utilizes metal-to-silicon junction technology to achieve fast switching speeds and reliable operation across wide temperature ranges.

Replacement Considerations

Public confirmed substitute part numbers include 1N5711 and 5082-2800.