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The Microchip Technology 1N5712UB/TR is a ceramic surface mount Schottky barrier diode qualified per MIL-PRF-19500/444. It features a maximum working peak reverse voltage of 16 V and an average rectified output current of 75 mA. The device exhibits a maximum forward voltage of 1.0 V at 35 mA and a maximum reverse leakage current of 150 nA at 16 V. Junction temperature ranges from -65°C to +150°C, with a thermal resistance of 100°C/W.
Verify the specific reliability level (JAN, JANTX, JANTXV, or JANS) required for your application, as these levels are available under the same base part number but may have distinct ordering suffixes. Confirm that the tape and reel packaging option aligns with your manufacturing equipment standards before finalizing procurement orders.
Select this component when a low-profile ceramic surface mount package is required for high-reliability environments. Ensure the 16 V reverse voltage rating meets the circuit requirements. Consider the 75 mA average rectified current limit and derating curves if operating near the maximum junction temperature of +150°C.
This device belongs to the 1N5711UB and 1N5712UB series of compliant Schottky barrier diodes. It serves as the surface mount counterpart to the axial-leaded 1N5712-1 in the DO-35 package. The product line supports various polarities including unidirectional, doubler, common anode, and common cathode configurations.
The 1N5712-1 is the direct through-hole equivalent in the DO-35 package. Verify pinout compatibility and thermal management requirements when transitioning between the UB surface mount package and other form factors within the same electrical specification family.
The 1N5712UB is available in unidirectional, doubler, common anode, and common cathode polarities.
Yes, the device is RoHS compliant by design.