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The Microchip Technology 1N5712UBD is a small-signal Schottky barrier diode designed for high-reliability applications. It features a dual configuration within a UB-4 surface-mount package. The device utilizes silicon technology and offers low reverse leakage characteristics suitable for sensitive circuits. Key electrical parameters include a maximum repetitive reverse voltage of 16 V, a forward current rating of 35 mA, and a maximum forward voltage of 1 V at rated current. The component supports an operating temperature range from -65°C to +150°C.
Verify the specific suffix (e.g., /TR) against the datasheet to confirm tape-and-reel packaging versus bulk supply. Confirm RoHS compliance status as some military variants may differ from commercial equivalents. Ensure the supplier provides valid traceability documentation required for JAN or JANTX qualified parts. Cross-reference the manufacturer part number with official Microchip databases to avoid counterfeit components.
Select this component when a dual Schottky diode is required in a surface-mount form factor for space-constrained designs. The UB-4 package offers a low-profile alternative to axial leads while maintaining hermetic sealing. Consider the 16 V reverse voltage limit and 35 mA forward current capability during thermal analysis. Verify that the -65°C to +150°C operating range meets the environmental requirements of the target application.
The 1N5712UBD belongs to the 1N5711/1N5712 family of Schottky barrier diodes qualified under MIL-PRF-19500/444. This series includes both axial-leaded (DO-35) and surface-mount (UB-4) versions. The UBD designation indicates a specific surface-mount variant with dual internal structures, distinct from the single-diode 1N5712-1 axial version.
Public confirmed substitute part numbers are not available in the provided source material.