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The Microchip Technology 1N5802 is a standard rectifier diode designed for general-purpose applications. It features a maximum DC reverse voltage (Vr) of 50 V and an average forward rectified current (Io) of 1 A. The device exhibits a typical forward voltage drop (Vf) of 875 mV at 1 A and a reverse leakage current of 1 µA at 50 V. Key electrical characteristics include a reverse recovery time (trr) of 25 ns and a junction capacitance of 25 pF at 10 V, 1 MHz. Operating temperatures range from -65°C to 175°C.
Verify the specific suffix (e.g., US, URS, TR) to confirm package type and reel specifications. Confirm RoHS status as military variants often differ from commercial equivalents. Validate that the supplier provides traceable documentation required for defense or aerospace procurement compliance.
Select this component when military-grade reliability and hermetic sealing are mandatory. Ensure the 50 V reverse voltage rating exceeds the circuit's peak inverse voltage. Verify that the 1 A current rating accommodates load requirements without exceeding thermal limits in the intended enclosure.
This part belongs to the 1N5802 series of ultrafast recovery glass rectifiers manufactured by Microchip Technology. The series includes variants such as 1N5804 and 1N5806 with different voltage ratings but similar structural designs. These devices utilize Category 1 metallurgical bonds for enhanced durability in harsh environments.
Substitute only with other parts explicitly listed as qualified replacements in official Microchip documentation. Generic equivalents may lack the required hermetic seal or military qualification.