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The Microchip Technology 1N5804USE3 is a single-element fast recovery rectifier diode designed for surface-mount applications. It features a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current rating of 2.5 A. The device exhibits a typical forward voltage drop of 975 mV at rated current and a maximum reverse leakage current of 1 uA. Key electrical characteristics include a fast recovery time of 25 ns and a maximum surge current capability of 35 A. It operates within a junction temperature range from -65 °C to +175 °C.
Verify the specific suffix 'USE3' confirms lead-free status and tape-and-reel packaging configuration. Confirm the manufacturer designation as Microchip Technology, noting historical lineage from Microsemi. Ensure the ordering part number matches the required surface-mount package variant to avoid through-hole substitutions.
Select this component when a 100 V blocking voltage and 2.5 A continuous current are required in a compact surface-mount footprint. The 25 ns recovery time makes it appropriate for higher frequency operations compared to standard rectifiers. Verify that the thermal management design supports the specified +175 °C maximum operating temperature.
This component belongs to the 1N58xx series of fast recovery rectifiers manufactured by Microchip Technology. It serves as a surface-mount, lead-free alternative to earlier versions of the 1N5804, maintaining identical electrical specifications while adhering to modern environmental compliance standards for electronic components.
Publicly confirmed substitute part numbers are not available in the provided documentation.