1N5805

Overview

The Microchip Technology 1N5805 is a fast recovery rectifier designed for through-hole mounting. It features a single diode configuration with a maximum repetitive peak reverse voltage of 200 V and an average forward rectified current rating of 1 A. The device exhibits a typical forward voltage drop of 1.3 V at rated current and supports a maximum surge current of 30 A. Electrical characteristics include a reverse leakage current of 5 µA and a fast recovery time of 75 ns. The component operates within a junction temperature range of -65 °C to +175 °C and is housed in the DO-41 axial leaded package.

Feature Summary

• Fast recovery performance suitable for high-frequency switching applications
• High thermal stability with extended operating temperature range up to 175 °C
• Robust surge current handling capability for transient protection

Applications

• High frequency rectification circuits
• Free-wheeling diodes in power supplies
• Polarity protection in electronic systems

Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm exact mechanical dimensions and marking details. Confirm RoHS compliance status as it varies by manufacturing lot and region. Ensure the selected package variant matches the intended PCB footprint requirements before finalizing procurement orders.

Selection Notes

Select this component when a standard axial leaded package is required for high-speed rectification tasks. Compare the 200 V reverse voltage rating against circuit peak inverse voltages to ensure adequate safety margins. Evaluate the 1 A continuous current limit against load requirements to prevent thermal overload during sustained operation.

Part Context

This part belongs to the 1N58xx series of fast recovery rectifiers manufactured by Microchip Technology. The series provides various voltage ratings while maintaining consistent current handling capabilities. These components are engineered to replace legacy silicon rectifiers in modern high-efficiency power conversion designs requiring rapid switching speeds.

Replacement Considerations

Cross-reference with other manufacturers' 1N5805 equivalents such as those from Vishay or ON Semiconductor. Verify that substitute parts match the DO-41 package outline and maintain identical electrical parameters including the 75 ns recovery time and 200 V blocking voltage.