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The 1N5805US/TR is a single ultra-fast recovery rectifier diode manufactured by Microchip Technology. It features a maximum repetitive peak reverse voltage of 135 V and an average forward rectified current rating of 1 A. The device utilizes a surface-mount D-5A package. Key electrical parameters include a maximum reverse leakage current of 1 uA at 125 V, a forward voltage drop of 875 mV at 1 A, and a typical reverse recovery time of 25 ns. The component operates within a junction temperature range of -65 °C to +175 °C.
Verify the specific suffix TR indicates tape-and-reel packaging configuration when ordering. Confirm that the 135 V rating aligns with system voltage requirements. Ensure compatibility with the D-5A footprint during PCB layout finalization. Cross-reference datasheet revisions for any updates to thermal or electrical specifications prior to production implementation.
Select this component for designs requiring fast recovery times under 25 ns. The 1 A current rating suits moderate power applications. Consider the 175 °C max junction temperature for high-thermal environments. Compare against lower voltage variants if system spikes exceed 135 V. Evaluate package thermal resistance for heat dissipation needs.
This part belongs to the 1N58xx series of ultra-fast recovery rectifiers from Microchip. The series includes various voltage ratings such as 50 V, 100 V, and 150 V options. These diodes are designed for general-purpose high-efficiency rectification in both commercial and military-grade applications.
JANTX1N5804US/TR is a related variant within the same family offering similar ultra-fast recovery performance.