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The Microchip Technology 1N5806US is a single ultrafast recovery rectifier diode designed for high-reliability applications. It features a maximum repetitive peak reverse voltage of 150 V and an average forward rectified current of 1 A. The device exhibits a fast reverse recovery time of 25 ns with a maximum forward voltage drop of 875 mV at 1 A. It operates within a junction temperature range of -65°C to +175°C and utilizes the D-5A SQ-MELF surface-mount package.
Verify the specific suffix against official datasheets, as ordering codes may indicate variations in qualification levels or packaging. Confirm RoHS status requirements, as standard versions may not comply with lead-free regulations. Ensure the supplier provides traceability documentation consistent with military-grade component sourcing standards.
Select this component when ultrafast switching speeds are required alongside hermetic sealing capabilities. The 150 V rating suits low-voltage DC-DC conversion stages. Verify that the D-5A SQ-MELF footprint aligns with the target PCB layout constraints before finalizing the design.
This part belongs to the 1N5806 series of ultrafast recovery rectifiers manufactured by Microchip Technology. The series includes variants such as the axial 1N5806 and other surface-mount options like the 1N5802US. These components share similar electrical characteristics but differ in package style and mounting configuration.
Direct substitutes include the JANTX1N5806US and JANS1N5806US from Microchip, which offer equivalent electrical specifications. Cross-manufacturer replacements must match the 150 V reverse voltage, 1 A current rating, and 25 ns recovery time while maintaining the SQ-MELF package form factor.