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The Microchip Technology 1N5807US is a voidless hermetically sealed ultrafast recovery glass rectifier designed for high-reliability applications. It features a single diode configuration in an SQ-MELF surface-mount package. Key electrical parameters include a maximum repetitive peak reverse voltage of 50 V and an average forward rectified current of 3 A. The device exhibits a fast recovery time of 30 ns with a maximum non-repetitive peak forward surge current of 125 A. It operates within a junction temperature range of -65°C to +175°C.
Verify the specific revision level and lot traceability documentation upon order confirmation, as military-grade components require strict adherence to quality standards. Confirm that the SQ-MELF package orientation matches the design footprint. Ensure compliance with export control regulations associated with defense-related semiconductor products before finalizing procurement transactions.
Select this component when a surface-mount ultrafast recovery diode with hermetic sealing is required for harsh environments. The 50 V rating and 3 A current capacity define its operational limits. Consider the 30 ns recovery time for high-speed switching needs. Verify thermal management requirements given the wide operating temperature range up to 175°C junction temperature.
This part belongs to the 1N5807 series of ultrafast recovery rectifiers manufactured by Microchip Technology. It shares functional similarities with through-hole variants but utilizes a surface-mount SQ-MELF package for automated assembly. The series is distinguished by its voidless-glass passivation and military qualification, differentiating it from commercial-grade silicon rectifiers lacking hermetic sealing.
Direct substitutes include JANS1N5807US and JANTX1N5807US, which share identical electrical specifications and package dimensions. Verify that any replacement maintains the same MIL-PRF-19500/477 qualification level and hermetic seal integrity to ensure compatibility with existing high-reliability designs.