1N5807US

1N5807US

$6.29
  • Description:DIODE STANDARD 50V 3A B SQMELF
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:b6c8b073fcaf Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE STANDARD 50V 3A B SQMELF
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io):3A
  • Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):30 ns
  • Current - Reverse Leakage @ Vr:5 µA @ 50 V
  • Capacitance @ Vr, F:60pF @ 10V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:SQ-MELF, B
  • Supplier Device Package:B, SQ-MELF
  • Operating Temperature - Junction:-65°C ~ 175°C

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1N5807US

Overview

The Microchip Technology 1N5807US is a voidless hermetically sealed ultrafast recovery glass rectifier designed for high-reliability applications. It features a single diode configuration in an SQ-MELF surface-mount package. Key electrical parameters include a maximum repetitive peak reverse voltage of 50 V and an average forward rectified current of 3 A. The device exhibits a fast recovery time of 30 ns with a maximum non-repetitive peak forward surge current of 125 A. It operates within a junction temperature range of -65°C to +175°C.

Feature Summary

  • Hermetically sealed construction using voidless-glass technology with internal metallurgical bond
  • Ultrafast recovery characteristics suitable for high-frequency switching applications
  • Military qualification compliant with MIL-PRF-19500/477 standards

Applications

  • High-reliability military systems requiring failure-intolerant components
  • Ultrafast recovery rectification circuits
  • Space-qualified power conversion modules

Procurement Notes

Verify the specific revision level and lot traceability documentation upon order confirmation, as military-grade components require strict adherence to quality standards. Confirm that the SQ-MELF package orientation matches the design footprint. Ensure compliance with export control regulations associated with defense-related semiconductor products before finalizing procurement transactions.

Selection Notes

Select this component when a surface-mount ultrafast recovery diode with hermetic sealing is required for harsh environments. The 50 V rating and 3 A current capacity define its operational limits. Consider the 30 ns recovery time for high-speed switching needs. Verify thermal management requirements given the wide operating temperature range up to 175°C junction temperature.

Part Context

This part belongs to the 1N5807 series of ultrafast recovery rectifiers manufactured by Microchip Technology. It shares functional similarities with through-hole variants but utilizes a surface-mount SQ-MELF package for automated assembly. The series is distinguished by its voidless-glass passivation and military qualification, differentiating it from commercial-grade silicon rectifiers lacking hermetic sealing.

Replacement Considerations

Direct substitutes include JANS1N5807US and JANTX1N5807US, which share identical electrical specifications and package dimensions. Verify that any replacement maintains the same MIL-PRF-19500/477 qualification level and hermetic seal integrity to ensure compatibility with existing high-reliability designs.

1N5807US1N5807US
$6.29
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