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The Microchip Technology 1N5808 is a standard recovery rectifier diode designed for surface-mount applications. It features a B-package-2 configuration with a maximum reverse voltage of 75 V and an average forward current rating of 6 A. The device exhibits a typical forward voltage drop of 875 mV at rated current and supports a maximum surge current of 125 A. Key electrical characteristics include a reverse leakage current of 5 uA and a fast recovery time of 30 ns. The component operates within a junction temperature range of -65 °C to +200 °C, ensuring reliability in high-temperature environments.
Verify the specific ordering suffix (e.g., /TR) to confirm reel packaging and quantity specifications. Ensure compatibility with surface-mount assembly processes by checking the B-package-2 footprint dimensions against design constraints. Confirm RoHS status and manufacturing origin details through official datasheets prior to final procurement decisions.
Select this component when high-temperature operation up to +200 °C is required. The 6 A current rating suits moderate-power applications, while the 30 ns recovery time makes it suitable for higher-frequency switching compared to standard slow-recovery diodes. Evaluate the 75 V reverse voltage limit to ensure adequate headroom for circuit peak inverse voltages.
This part belongs to the family of standard recovery rectifiers manufactured by Microchip Technology. It utilizes a surface-mount package format distinct from axial leaded equivalents. The device is categorized under discrete semiconductors, specifically diodes and rectifiers, serving as a fundamental passive component in electronic power management systems.
Publicly confirmed substitute part numbers are not available in the provided documentation.