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The 1N5809E3/TR is a fast recovery rectifier manufactured by Microchip Technology. It features a 100 V reverse voltage rating and supports an average forward current of 6 A in a through-hole B-Package-2 configuration. The device exhibits a low forward voltage of 875 mV at the rated current and a rapid 30 ns reverse recovery time. Designed for high-reliability environments, it operates within a junction temperature range of -65°C to +175°C. The component is supplied in a reel packaging format.
Verify the specific suffix E3 indicates lead-free compliance and TR denotes tape-and-reel packaging upon ordering. Confirm the manufacturer designation matches Microchip Technology specifications. Ensure the package type aligns with the required through-hole mounting constraints. Validate that the 100 V rating meets the circuit's peak inverse voltage requirements before integration.
Select this component when a hermetically sealed, military-grade fast recovery diode is required. The 6 A current rating and 100 V blocking capability define its operational limits. Consider the through-hole package for mechanical stability in rugged designs. Verify thermal management needs against the specified junction temperature range.
This part belongs to the 1N58xx series of ultrafast recovery glass rectifiers. These devices are qualified per MIL-PRF-19500/477 standards. The series provides industry-standard ratings for critical applications where failure is not an option. The E3 suffix typically denotes environmental compliance within the product line.
Public confirmed substitute part numbers are not available in the provided documentation.