1N5809E3

Overview

The Microchip Technology 1N5809E3 is a lead-free ultrafast recovery rectifier diode designed for high-reliability applications. It features a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current rating of 6 A. The device exhibits a fast reverse recovery time of 30 ns, ensuring efficient switching performance. It operates within a junction temperature range of -65°C to +175°C and utilizes a through-hole B-Package-2 configuration.

Feature Summary

• Ultrafast recovery characteristics with minimal reverse recovery time
• Military-grade reliability suitable for critical systems
• Hermetically sealed void-less glass construction

Applications

• High-reliability power supply circuits
• Military aerospace electronic systems
• Fast-switching rectification in industrial equipment

Procurement Notes

Verify the specific suffix 'e3' confirms lead-free compliance and RoHS status. Confirm the package type matches the required through-hole B-Package-2 footprint. Ensure the ordering quantity aligns with reel specifications if applicable. Validate that the military qualification meets project requirements.

Selection Notes

Select this component when low reverse recovery charge is critical for circuit efficiency. The wide operating temperature range supports harsh environments. Compare against standard rectifiers where faster switching speeds are necessary to reduce losses.

Part Context

This part belongs to the 1N58xx series of ultrafast recovery glass rectifiers manufactured by Microchip Technology. These devices are qualified per MIL-PRF-19500/477 standards. The series provides robust performance for applications requiring high reliability and fast switching capabilities.