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The Microchip Technology 1N5809URS/TR is a military-qualified ultrafast recovery glass rectifier. It features a void-less hermetically sealed glass package with tungsten slugs and internal Category 1 metallurgical bonds. The device operates within a junction temperature range of -65°C to +175°C. Key electrical parameters include a working peak reverse voltage of 100 V, an average rectified output current of 3.0 A at 55°C ambient, and a maximum forward surge current of 125 A. The reverse recovery time is 30 ns, with a maximum forward voltage of 0.875 V at 4 A.
Verify the specific qualification level (JAN, JANTX, JANTXV, or JANS) required for your application, as the base part number covers multiple grades. Confirm RoHS compliance status, noting that compliant versions are available on commercial grade only. Ensure the URS package configuration matches your PCB pad layout requirements before ordering.
Select this component for designs demanding ultrafast recovery times and high thermal stability. The 100 V rating suits medium-voltage rectification tasks. Consider the 3.0 A derated current capability when designing for elevated ambient temperatures above 55°C. Verify that the mixed end-cap geometry of the URS package fits the intended surface mount footprint.
This device belongs to the 1N5807US, 1N5809US, 1N5811US, and URS series of ultrafast recovery glass rectifiers. The 'URS' designation indicates a surface mount MELF package with one square and one round end cap. These devices are JEDEC registered equivalents to the axial-leaded 1N5807, 1N5809, and 1N5811 series diodes.
Direct replacements include the 1N5809US variant for identical performance in a standard MELF package. For axial leaded requirements, the 1N5809 serves as the through-hole equivalent. Ensure any substitute maintains the 100 V reverse voltage and 30 ns recovery time specifications.
The 'URS' suffix denotes a surface mount MELF package configuration featuring one square end cap and one round end cap.
Yes, the datasheet states that these devices are inherently radiation hard as described in Microsemi MicroNote 050.