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The 1N5809URS is a military-qualified ultrafast recovery rectifier diode manufactured by Microchip Technology. It features a single configuration with a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current rating of 3 A. The device exhibits a fast recovery time of 30 ns and a low forward voltage drop of 875 mV at 4 A. It operates within a junction temperature range of -65°C to +175°C and utilizes the SQ-MELF (B) surface-mount package.
Verify that the specific part number includes the URS suffix, which denotes the hermetically sealed SQ-MELF package and military qualification status. Confirm compliance with MIL-PRF-19500/477 requirements during procurement. Ensure storage and handling procedures align with the specifications for hermetically sealed semiconductor devices to maintain integrity.
Select this component when military qualification and hermetic sealing are mandatory for the application. The 100 V reverse voltage and 3 A current ratings define its electrical limits. The SQ-MELF package requires appropriate surface-mount assembly techniques. Verify that the 30 ns recovery time meets the switching speed requirements of the target circuit design.
This component belongs to the 1N58xx series of ultrafast recovery rectifiers produced by Microchip Technology. The series offers various voltage ratings from 50 V to 150 V. The URS variant specifically provides the hermetically sealed SQ-MELF form factor, distinguishing it from standard plastic-packaged equivalents in the same family.
Direct substitutes include other military-qualified ultrafast rectifiers in the SQ-MELF package with matching 100 V and 3 A ratings. Verify pinout compatibility and thermal performance before substitution.