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The Microsemi Corporation 1N5811/TR is a single-element silicon rectifier diode designed for through-hole mounting in an axial B-package configuration. It features a maximum repetitive peak reverse voltage of 150 V and supports an average forward rectified current of 6 A. The device exhibits a fast recovery characteristic with a typical reverse recovery time of 30 ns, making it suitable for high-frequency applications. Forward voltage drop is specified at 875 mV when conducting 4 A. The component operates within a junction temperature range of -65°C to +175°C and includes a non-repetitive peak forward surge current rating of 125 A.
Verify the specific suffix designation against the manufacturer's official datasheet to confirm exact electrical tolerances and packaging specifications. Ensure the procurement channel provides traceability documentation required for aerospace or military-grade components. Confirm RoHS compliance status as indicated by the 'N' designation in product attributes. Validate that the received lot matches the ordering part number regarding lead finish and package variant.
Select this component when a fast recovery rectifier with high current capacity is required for through-hole assembly. The 150 V reverse voltage rating suits low-voltage AC-DC conversion stages. Consider the 6 A average current capability for primary or secondary rectification tasks. The wide operating temperature range allows deployment in harsh environments where standard commercial diodes may fail. Evaluate the 30 ns recovery time against circuit switching frequencies to minimize switching losses.
This part belongs to the 1N58xx series of ultrafast rectifiers manufactured by Microsemi (formerly Microsemi). The series is characterized by planar technology and high reliability standards. Variants within the family share similar electrical profiles but differ in package types, such as surface mount options like the 1N5811U. The 1N5811/TR specifically denotes the axial through-hole version supplied in tape and reel format.