1N5811A/TR

Overview

The Microchip Technology 1N5811A/TR is a through-hole ultrafast recovery rectifier diode. It features a maximum DC reverse voltage of 150 V and an average forward rectified current of 6 A. The device exhibits a typical forward voltage drop of 875 mV at 4 A and a reverse leakage current of 5 µA at 150 V. Its junction temperature range spans from -65°C to +175°C, with a maximum non-repetitive peak forward surge current of 125 A.

Feature Summary

• Ultrafast recovery performance for high-frequency applications
• Hermetically sealed void-less glass construction
• High thermal stability with extended operating temperature range

Applications

• High-reliability power conversion systems
• Free-wheeling circuits in switch-mode power supplies
• Polarity protection in sensitive electronic equipment

Procurement Notes

Verify the specific suffix 'A' against official datasheets to confirm it denotes a standard commercial grade variant rather than a military qualification level. Confirm package type and tape-and-reel specifications match design requirements before ordering.

Selection Notes

Select this component when high-speed switching and robust thermal performance are required in axial leaded packages. Ensure the 150 V reverse voltage rating exceeds the circuit's peak inverse voltage. Verify that the 6 A continuous current capability aligns with load demands.

Part Context

This part belongs to the 1N58xx series of ultrafast recovery rectifiers manufactured by Microchip Technology. It shares functional similarities with other axial diodes in the family but is distinguished by its specific 150 V rating and 6 A current capacity within the glass-sealed B-package configuration.

Replacement Considerations

Direct substitutes include JANTX1N5811/TR or JAN1N5811/TR for qualified variants. Commercial equivalents like 1N5811/TR may be used if military-grade sealing is not required.