1N5811AUS/TR

Overview

The Microchip Technology 1N5811AUS/TR is a surface-mount ultrafast recovery rectifier diode. It features a 150 V reverse voltage rating and a 6 A average forward current capability. The device exhibits a maximum forward voltage of 875 mV and a reverse leakage current of 5 µA. Its ultrafast recovery time is specified at 30 ns, with a peak non-repetitive forward surge current rating of 125 A. Operating temperatures range from -65 °C to +175 °C.

Feature Summary

• Ultrafast recovery characteristics for high-frequency switching applications
• Hermetically sealed void-less glass construction for reliability
• Internal Category 1 metallurgical bond for structural integrity

Applications

• High-reliability military circuits
• Space-qualified power conversion systems
• Avionics rectification modules

Procurement Notes

Verify the specific suffix against official datasheets to confirm package type and qualification level. Ensure the component meets required environmental standards for the intended deployment environment. Cross-reference manufacturer part numbers to avoid confusion with commercial equivalents.

Selection Notes

Select this component when ultrafast recovery times are critical for circuit efficiency. The hermetic seal makes it suitable for harsh environments where standard plastic packages may fail. Verify thermal management requirements given the wide operating temperature range.

Part Context

This device belongs to the 1N58xx series of ultrafast recovery rectifiers manufactured by Microchip. These components are designed for high-reliability applications requiring robust performance under extreme conditions. The series includes various voltage ratings while maintaining consistent recovery characteristics.

Replacement Considerations

JAN1N5811/TR