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The Microchip Technology 1N5812R is a silicon rectifier diode designed for general-purpose applications. It features a maximum average forward rectified current of 1.0 A and a repetitive peak reverse voltage rating of 40 V. The device utilizes a DO-41 axial leaded package, suitable for through-hole mounting. Key electrical characteristics include a maximum DC reverse leakage current of 5.0 µA at rated voltage and a maximum DC forward voltage drop of 1.1 V at the specified forward current. The component supports a maximum non-repetitive peak forward surge current of 30 A under standard half-sine wave conditions.
Verify the specific suffix 'R' against the official Microchip datasheet to confirm it denotes the correct tape-and-reel packaging variant rather than bulk. Ensure the ordering part number matches the exact mechanical dimensions and marking requirements specified in the latest product change notifications. Confirm RoHS compliance status directly with the manufacturer documentation prior to procurement.
Select this component when a 1.0 A continuous current rating and 40 V reverse voltage blocking capability are required for through-hole implementations. Compare the 1.1 V forward voltage drop against system efficiency targets. Ensure the DO-41 package size fits the PCB layout constraints. Verify that the thermal dissipation capabilities align with the expected ambient operating temperatures and duty cycles of the application.
This part belongs to the standard 1N58xx series of silicon rectifiers manufactured by Microchip Technology. These components are widely used in industrial and consumer electronics for basic power conversion tasks. The 1N5812R variant specifically provides a 40 V rating within this lineup, offering a balance between voltage handling and forward conduction efficiency for low-voltage DC systems.