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The onsemi 1N5817 is a Schottky barrier rectifier featuring a large-area metal-to-silicon power diode with chrome barrier metal and epitaxial construction. It provides a peak repetitive reverse voltage of 20 V, an average rectified forward current of 1.0 A, and a non-repetitive peak surge current of 25 A. The device operates within a junction temperature range of -65°C to +125°C and utilizes the DO-41 axial lead package.
Verify the specific ordering suffix (e.g., G, RL) to confirm packaging format such as bag or tape and reel. Confirm RoHS compliance status and Pb-Free designation through official documentation before procurement.
Select based on the 20 V reverse voltage rating and 1.0 A continuous current requirement. Ensure thermal management accounts for the 80 °C/W junction-to-ambient resistance. Verify compatibility with high-frequency operation up to several megahertz.
This component belongs to the 1N581x series of axial lead Schottky rectifiers manufactured by onsemi. It shares design features with the 1N5818 and 1N5819 models, differing primarily in maximum reverse voltage ratings while maintaining identical current capabilities and package styles.
Compatible substitutes include the 1N5818 and 1N5819 from onsemi, which share the same package and current ratings but offer higher reverse voltage capabilities.