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The SMC Diode Solutions 1N5817 is a silicon Schottky barrier rectifier designed for low voltage and high frequency applications. It features a maximum average forward rectified current of 1 A and a maximum repetitive peak reverse voltage of 20 V. The device utilizes a metal-semiconductor junction with guard ring protection to ensure transient stability. It is housed in a DO-41 axial leaded plastic package, suitable for through-hole mounting. Key electrical characteristics include a low forward voltage drop and high surge capability, making it efficient for power conversion circuits.
Verify the specific manufacturer datasheet for the SMC Diode Solutions variant, as parameters such as forward voltage and reverse leakage may differ from generic 1N5817 specifications. Confirm RoHS compliance status and packaging options directly with the supplier. Ensure the component meets the required thermal resistance and operating temperature range for the intended application environment before finalizing procurement.
Select this component for applications requiring low forward voltage drop and fast recovery times at 20 V reverse voltage ratings. The DO-41 package is appropriate for through-hole assembly where axial leads are preferred. Consider the 1 A continuous current rating and ensure adequate heat dissipation for the specific circuit load. Verify that the avalanche capability and surge ratings align with the system's transient requirements.
The 1N5817 belongs to the standard Schottky rectifier family, widely used in power supply designs. It serves as a common replacement for general-purpose low-voltage rectification tasks. The DO-41 package is a standard axial leaded form factor compatible with legacy and modern PCB layouts. This component type is distinct from higher voltage variants like the 1N5818 or 1N5819 within the same series.
The maximum repetitive peak reverse voltage (Vrrm) is 20 V.
Yes, the device incorporates a guard ring structure to provide protection against transients.