SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 1N5817G is a Schottky Barrier Rectifier featuring an axial lead DO-41 package. It provides a peak repetitive reverse voltage of 20 V and supports an average rectified forward current of 1.0 A. The device exhibits a maximum instantaneous forward voltage of 0.75 V at 1.0 A and a non-repetitive peak surge current rating of 25 A. Operating junction temperatures range from -65°C to +125°C, with thermal resistance (junction-to-ambient) specified at 80°C/W.
Verify the specific ordering suffix against official documentation to confirm packaging type and compliance status. Confirm that the 'G' designation aligns with the required environmental specifications and mechanical case outline details provided in the manufacturer's datasheet before finalizing procurement.
Select this component when circuit requirements demand a 20 V blocking capability combined with a 1 A continuous current rating. Ensure the application environment remains within the specified -65°C to +125°C operating temperature range and consider the 80°C/W thermal resistance for adequate heat dissipation design.
This part belongs to the 1N581x series of axial lead rectifiers manufactured by onsemi. The series utilizes Schottky Barrier principles in large area metal-to-silicon power diodes. The 1N5817G variant specifically addresses applications requiring lower reverse voltage ratings compared to the 30 V and 40 V counterparts in the same family.
Direct substitutes include the standard 1N5817 and the tape-and-reel variants 1N5817RL or 1N5817RLG. Verify that any replacement maintains the identical DO-41 package dimensions and electrical characteristics defined in the original datasheet.