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The Vishay General Semiconductor 1N5818-E3/1 is a Schottky Barrier Rectifier featuring a maximum repetitive peak reverse voltage of 30 V and a maximum average forward rectified current of 1.0 A. It utilizes a DO-204AL (DO-41) axial package with matte tin-plated leads. The device exhibits a maximum instantaneous forward voltage of 0.550 V at 1.0 A DC and a typical junction capacitance of 110 pF at 4.0 V, 1.0 MHz. Operating temperatures range from -65 °C to +125 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging configuration and compliance status. Confirm that the E3 suffix indicates RoHS compliance and commercial grade classification as defined in the datasheet. Ensure the component meets the required thermal resistance and surge current ratings for the intended circuit design before finalizing procurement.
Select this component for applications requiring low conduction losses and high-frequency operation within a 30 V reverse voltage limit. Consider the 1.0 A average forward current rating and the 25 A peak surge capability when designing power stages. Verify compatibility with the DO-41 through-hole mounting style and ensure the operating temperature range aligns with system thermal constraints.
This part belongs to the 1N5817 through 1N5819 series of Schottky Barrier Rectifiers manufactured by Vishay General Semiconductor. These devices share identical mechanical data and features, differing primarily in their maximum repetitive peak reverse voltage ratings. The 1N5818 specifically offers a 30 V rating, positioned between the 20 V 1N5817 and the 40 V 1N5819.
Direct substitutes include other manufacturers' 1N5818 equivalents or Vishay variants such as 1N5818-E3/54 or 1N5818-E3/73, provided they maintain the same electrical characteristics and DO-41 package form factor.