1N5818G

1N5818G

$0.17
  • Description:DIODE SCHOTTKY 30V 1A AXIAL
  • Series:-
  • Mfr:onsemi
  • Package:Bulk

SKU:ddb4c230b266 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:DIODE SCHOTTKY 30V 1A AXIAL
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io):1A
  • Voltage - Forward (Vf) (Max) @ If:550 mV @ 1 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 30 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Through Hole
  • Package / Case:DO-204AL, DO-41, Axial
  • Supplier Device Package:Axial
  • Operating Temperature - Junction:-65°C ~ 125°C
  • Grade:-
  • Qualification:-

Download product information

1N5818G

Overview

The onsemi 1N5818G is a Schottky Barrier Rectifier featuring a 30 V peak repetitive reverse voltage and a 1.0 A average rectified forward current rating. Packaged in the DO-41 axial lead configuration, it utilizes chrome barrier metal and epitaxial construction for low power loss. The device exhibits a maximum instantaneous forward voltage of 0.55 V at 1.0 A and supports a non-repetitive peak surge current of 25 A. It operates within a junction temperature range of -65°C to +125°C.

Feature Summary

  • Employs Schottky Barrier principle with majority carrier conduction for extremely low stored charge.
  • Features an oxide passivated metal overlap contact structure for high reliability.
  • Includes guardring design for overvoltage protection capabilities.

Applications

  • Low-voltage, high-frequency inverters
  • Free wheeling diodes in switching circuits
  • Polarity protection applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping configuration. Confirm RoHS compliance status and Pb-Free designation requirements for the target assembly process. Ensure thermal derating calculations align with the specified junction-to-ambient resistance values provided in the datasheet.

Selection Notes

Select this component for circuits requiring fast switching speeds and minimal reverse recovery time due to its majority carrier operation. Evaluate the thermal management strategy based on the specified junction-to-ambient resistance and ambient temperature ratings. Compare the 30 V reverse voltage rating against the circuit's peak inverse voltage requirements to ensure adequate safety margins.

Part Context

This part belongs to the 1N5817/1N5818/1N5819 series of Axial Lead Rectifiers manufactured by onsemi. The series shares identical mechanical dimensions and general electrical characteristics, differentiated primarily by their peak repetitive reverse voltage ratings of 20 V, 30 V, and 40 V respectively.

Replacement Considerations

Cross-reference with other manufacturers offering equivalent DO-41 packaged Schottky rectifiers rated for 1 A and 30 V. Verify that substitute components meet the same forward voltage drop and reverse leakage current specifications to maintain circuit performance integrity.

FAQ

What is the typical capacitance value of the 1N5818G at 1.0 MHz?

The datasheet provides a graph illustrating typical capacitance versus reverse voltage at 1.0 MHz, indicating that capacitance decreases as reverse voltage increases.

How does the 1N5818G handle high-frequency operation?

Due to majority carrier conduction, the device lacks minority carrier storage effects, allowing satisfactory rectification efficiency up to several megahertz.

1N5818G1N5818G
$0.17
Buy Now