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The Diodes Incorporated 1N5818M-13 is a surface mount Schottky barrier rectifier housed in a glass MELF package. It features a maximum average forward rectified current of 1.0 A and a working peak reverse voltage of 30 V. The device exhibits a low forward voltage drop, reaching 0.550 V at 1.0 A and 0.875 V at 3.0 A. Maximum reverse leakage current is specified at 1.0 mA at 25°C and 10 mA at 100°C. Thermal resistance from junction to ambient is typically 130 K/W, with an operating temperature range spanning -60°C to +125°C.
Verify the specific ordering suffix matches the required tape and reel quantity configuration. Confirm that the glass MELF package variant aligns with the intended surface mount assembly process. Ensure compliance with MIL-STD-208 terminal solderability requirements during incoming inspection. Cross-reference the datasheet revision to validate electrical parameters against current production batches.
Select this component when a surface mount Schottky rectifier with glass passivation is required for high-reliability environments. The 30 V reverse voltage rating suits low-voltage power conversion stages. Evaluate thermal management needs based on the 130 K/W junction-to-ambient resistance. Consider the 1.0 A continuous current limit alongside derating curves for elevated terminal temperatures.
This part belongs to the 1N581x series of surface mount Schottky barrier rectifiers manufactured by Diodes Incorporated. The 'M' designation indicates the MELF glass package form factor, distinguishing it from axial leaded counterparts. The '-13' suffix typically denotes the standard tape and reel packaging format used for automated surface mount technology assembly lines.
The typical junction capacitance is 110 pF, measured at a reverse voltage of 4.0 V and a frequency of 1.0 MHz.
The maximum forward voltage drop is 0.550 V at a forward current of 1.0 A and increases to 0.875 V at a forward current of 3.0 A.