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The onsemi 1N5819 is a silicon Schottky barrier rectifier rated for 40 V peak repetitive reverse voltage and 1.0 A average rectified forward current. It utilizes chrome barrier metal, epitaxial construction with oxide passivation, and metal overlap contact within an axial lead DO-41 package (Case 59). The device operates across a junction temperature range of -65°C to +125°C and withstands a non-repetitive peak surge current of 25 A. Key electrical characteristics include a maximum instantaneous forward voltage of 0.6 V at 1.0 A and a maximum reverse current of 1.0 mA at rated DC voltage and 25°C.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm packaging format and compliance status. The standard part number denotes an axial lead configuration. Confirm that the procurement source provides valid traceability data consistent with the datasheet specifications. Ensure the component matches the required thermal resistance parameters for the intended mounting method.
Select this component when designing circuits requiring low power loss and fast switching speeds at low voltages. The 40 V rating distinguishes it from lower voltage variants like the 1N5817 or higher voltage options like the 1N5818. Consider the thermal resistance characteristics and mounting method to ensure the junction temperature remains within the specified operating range during continuous forward current flow.
This device belongs to the 1N581x series of axial lead Schottky barrier rectifiers manufactured by onsemi. The series includes variants with different reverse voltage ratings but shares identical mechanical dimensions and general performance characteristics. The 1N5819 specifically targets applications needing a balance between forward current capability and moderate reverse blocking voltage.
Compatible substitutes include other manufacturers' 1N5819 equivalents provided they meet the same 40 V reverse voltage and 1.0 A forward current ratings. Verify that replacement parts utilize the same DO-41 axial lead package and maintain comparable forward voltage and reverse leakage specifications.
Due to majority carrier conduction, the 1N5819 lacks minority carrier stored charge, allowing it to operate satisfactorily up to several megahertz without reverse recovery transients.
The device can withstand a non-repetitive peak surge current of 25 A for one cycle at 60 Hz applied at rated load conditions.